ISL6613EIBZ
IC GATE DRVR HALF-BRIDGE 8SOICManufacturer: Renesas Electronics Corporation
Categories: Gate Drivers
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Renesas Electronics Corporation ISL6613EIBZ is a half-bridge gate driver IC designed for N-channel MOSFETs. This non-inverting device supports synchronous rectification and features two independent drivers. It operates with a supply voltage range of 10.8V to 13.2V and can handle a maximum high-side voltage of 36V via its bootstrap capability. The ISL6613EIBZ delivers peak output currents of 1.25A source and 2A sink, with typical rise and fall times of 26ns and 18ns respectively. Packaged in an 8-SOIC-EP with an exposed pad for enhanced thermal performance, this component is suitable for surface mounting. Its robust design makes it applicable in power supply, power factor correction, and motor control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Voltage - Supply | 10.8V ~ 13.2V |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 36 V |
| Supplier Device Package | 8-SOIC-EP |
| Rise / Fall Time (Typ) | 26ns, 18ns |
| Channel Type | Synchronous |
| Driven Configuration | Half-Bridge |
| Number of Drivers | 2 |
| Gate Type | N-Channel MOSFET |
| Logic Voltage - VIL, VIH | - |
| Current - Peak Output (Source, Sink) | 1.25A, 2A |
| Programmable | Not Verified |
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