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ISL6613EIB

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ISL6613EIB

IC GATE DRVR HALF-BRIDGE 8SOIC

Manufacturer: Renesas Electronics Corporation

Categories: Gate Drivers

Quality Control: Learn More

Renesas Electronics Corporation's ISL6613EIB is a half-bridge gate driver IC designed for high-performance power conversion applications. This non-inverting driver features two independent channels, each capable of sinking 2A and sourcing 1.25A, with typical rise and fall times of 26ns and 18ns respectively, enabling efficient switching of N-channel MOSFETs. The device supports a high-side bootstrap voltage up to 36V, facilitating operation with a supply voltage range of 10.8V to 13.2V. Its 8-SOIC-EP (Exposed Pad) package ensures effective thermal management for demanding operating conditions, specified from -40°C to 125°C. The synchronous channel configuration and half-bridge driven configuration make the ISL6613EIB suitable for use in power supplies, motor control, and battery charging systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / Case8-SOIC (0.154"", 3.90mm Width) Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 125°C (TJ)
Voltage - Supply10.8V ~ 13.2V
Input TypeNon-Inverting
High Side Voltage - Max (Bootstrap)36 V
Supplier Device Package8-SOIC-EP
Rise / Fall Time (Typ)26ns, 18ns
Channel TypeSynchronous
Driven ConfigurationHalf-Bridge
Number of Drivers2
Gate TypeN-Channel MOSFET
Logic Voltage - VIL, VIH-
Current - Peak Output (Source, Sink)1.25A, 2A
ProgrammableNot Verified

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