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ISL6613BIBZ

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ISL6613BIBZ

IC GATE DRVR HALF-BRIDGE 8SOIC

Manufacturer: Renesas Electronics Corporation

Categories: Gate Drivers

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Renesas Electronics Corporation's ISL6613BIBZ is a high-performance, non-inverting half-bridge gate driver IC designed for demanding power conversion applications. This device features two independent gate drive outputs, capable of sourcing 1.25A and sinking 2A peak current, facilitating rapid switching of N-channel MOSFETs. The driver supports a bootstrap voltage of up to 36V, enabling efficient operation of high-side MOSFETs. Optimized for surface mounting within an 8-SOIC package, the ISL6613BIBZ offers typical rise and fall times of 26ns and 18ns respectively, contributing to reduced switching losses. Its operating temperature range of -40°C to 125°C (TJ) makes it suitable for industrial, automotive, and telecommunications power supply designs. The device operates from a supply voltage range of 7V to 13.2V.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 125°C (TJ)
Voltage - Supply7V ~ 13.2V
Input TypeNon-Inverting
High Side Voltage - Max (Bootstrap)36 V
Supplier Device Package8-SOIC
Rise / Fall Time (Typ)26ns, 18ns
Channel TypeSynchronous
Driven ConfigurationHalf-Bridge
Number of Drivers2
Gate TypeN-Channel MOSFET
Logic Voltage - VIL, VIH-
Current - Peak Output (Source, Sink)1.25A, 2A
ProgrammableNot Verified

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