ISL6613AIBZ
IC GATE DRVR HALF-BRIDGE 8SOICManufacturer: Renesas Electronics Corporation
Categories: Gate Drivers
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Renesas Electronics Corporation ISL6613AIBZ is a high-performance half-bridge gate driver IC. This non-inverting driver is designed for driving N-channel MOSFETs in synchronous configurations. It features independent high-side and low-side outputs, capable of sourcing 1.25A and sinking 2A peak output current, respectively. The ISL6613AIBZ supports a bootstrap voltage of up to 36V for the high-side driver. Typical rise and fall times are 26ns and 18ns. Operating over an industrial temperature range of -40°C to 125°C (TJ), this component is housed in an 8-SOIC package suitable for surface mounting. The supply voltage range is 10.8V to 13.2V. This device finds application in power supply designs and motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Voltage - Supply | 10.8V ~ 13.2V |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 36 V |
| Supplier Device Package | 8-SOIC |
| Rise / Fall Time (Typ) | 26ns, 18ns |
| Channel Type | Synchronous |
| Driven Configuration | Half-Bridge |
| Number of Drivers | 2 |
| Gate Type | N-Channel MOSFET |
| Logic Voltage - VIL, VIH | - |
| Current - Peak Output (Source, Sink) | 1.25A, 2A |
| Programmable | Not Verified |
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