ISL6613AEIBZ-T
IC GATE DRVR HALF-BRIDGE 8SOICManufacturer: Renesas Electronics Corporation
Categories: Gate Drivers
Quality Control: Learn More
Renesas Electronics Corporation's ISL6613AEIBZ-T is a half-bridge gate driver IC designed for efficient power conversion applications. This non-inverting driver features two output channels, each capable of sourcing 1.25A and sinking 2A peak current, enabling fast switching of N-channel MOSFETs. The device supports bootstrap operation with a maximum high-side voltage of 36V, facilitating the driving of high-side switches in various configurations. Its 8-SOIC-EP (Exposed Pad) package ensures robust thermal performance for demanding environments. The ISL6613AEIBZ-T is suitable for use in industries such as industrial power supplies, automotive electronics, and renewable energy systems, where reliable and efficient power management is critical. Operating across a temperature range of -40°C to 125°C (TJ), it offers typical rise and fall times of 26ns and 18ns respectively.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Voltage - Supply | 10.8V ~ 13.2V |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 36 V |
| Supplier Device Package | 8-SOIC-EP |
| Rise / Fall Time (Typ) | 26ns, 18ns |
| Channel Type | Synchronous |
| Driven Configuration | Half-Bridge |
| Number of Drivers | 2 |
| Gate Type | N-Channel MOSFET |
| Logic Voltage - VIL, VIH | - |
| Current - Peak Output (Source, Sink) | 1.25A, 2A |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
HIP2100IBZT
IC GATE DRVR HALF-BRIDGE 8SOIC
HIP2210FRTZ-T7A
IC GATE DRVR HALF-BRIDGE 10TDFN
ISL6208IRZ-T
IC GATE DRVR HALF-BRIDGE 8QFN
