ISL6613AECB
IC GATE DRVR HALF-BRIDGE 8SOICManufacturer: Renesas Electronics Corporation
Categories: Gate Drivers
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Renesas Electronics Corporation's ISL6613AECB is a dual, half-bridge gate driver IC designed for efficient power conversion applications. This non-inverting driver features a synchronous channel type and is housed in an 8-SOIC-EP package, suitable for surface mount applications. It provides peak output currents of 1.25A source and 2A sink, with a maximum high-side bootstrap voltage of 36V. The device operates within a supply voltage range of 10.8V to 13.2V, supporting N-channel MOSFET gates. Typical rise and fall times are 26ns and 18ns, respectively. The ISL6613AECB is utilized in industries such as industrial power supplies, telecommunications, and automotive electronics where robust power stage control is critical. It operates within an ambient temperature range of 0°C to 125°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 0°C ~ 125°C (TJ) |
| Voltage - Supply | 10.8V ~ 13.2V |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 36 V |
| Supplier Device Package | 8-SOIC-EP |
| Rise / Fall Time (Typ) | 26ns, 18ns |
| Channel Type | Synchronous |
| Driven Configuration | Half-Bridge |
| Number of Drivers | 2 |
| Gate Type | N-Channel MOSFET |
| Logic Voltage - VIL, VIH | - |
| Current - Peak Output (Source, Sink) | 1.25A, 2A |
| Programmable | Not Verified |
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