ISL6612EIBZ
IC GATE DRVR HALF-BRIDGE 8SOICManufacturer: Renesas Electronics Corporation
Categories: Gate Drivers
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Renesas Electronics Corporation ISL6612EIBZ is a half-bridge gate driver IC designed for efficient control of N-Channel MOSFETs. This non-inverting driver operates with a supply voltage range of 10.8V to 13.2V, featuring a bootstrap capability up to 36V for the high-side driver. The ISL6612EIBZ delivers robust performance with peak output currents of 1.25A source and 2A sink, and typical rise/fall times of 26ns and 18ns, respectively. Packaged in an 8-SOIC-EP with an exposed pad (0.154", 3.90mm width) for enhanced thermal management, this synchronous driver is suitable for surface mounting. It is commonly utilized in power supply applications, motor control, and power factor correction circuits within the industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Voltage - Supply | 10.8V ~ 13.2V |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 36 V |
| Supplier Device Package | 8-SOIC-EP |
| Rise / Fall Time (Typ) | 26ns, 18ns |
| Channel Type | Synchronous |
| Driven Configuration | Half-Bridge |
| Number of Drivers | 2 |
| Gate Type | N-Channel MOSFET |
| Logic Voltage - VIL, VIH | - |
| Current - Peak Output (Source, Sink) | 1.25A, 2A |
| Programmable | Not Verified |
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