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ISL6612ECBZ-T

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ISL6612ECBZ-T

IC GATE DRVR HALF-BRIDGE 8SOIC

Manufacturer: Renesas Electronics Corporation

Categories: Gate Drivers

Quality Control: Learn More

Renesas Electronics Corporation's ISL6612ECBZ-T is a half-bridge gate driver IC housed in an 8-SOIC-EP package, designed for surface mount applications. This non-inverting driver supports synchronous operation and is optimized for driving N-channel MOSFETs in a half-bridge configuration. It features a peak output current capability of 1.25A source and 2A sink, with typical rise and fall times of 26ns and 18ns respectively. The device operates with a supply voltage range of 10.8V to 13.2V, and the high-side voltage can reach a maximum of 36V via bootstrap. The ISL6612ECBZ-T is suitable for applications in power supply units and motor control systems. The component is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width) Exposed Pad
Mounting TypeSurface Mount
Operating Temperature0°C ~ 125°C (TJ)
Voltage - Supply10.8V ~ 13.2V
Input TypeNon-Inverting
High Side Voltage - Max (Bootstrap)36 V
Supplier Device Package8-SOIC-EP
Rise / Fall Time (Typ)26ns, 18ns
Channel TypeSynchronous
Driven ConfigurationHalf-Bridge
Number of Drivers2
Gate TypeN-Channel MOSFET
Logic Voltage - VIL, VIH-
Current - Peak Output (Source, Sink)1.25A, 2A
ProgrammableNot Verified

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