ISL6612BIRZ-T
IC GATE DRVR HALF-BRIDGE 10DFNManufacturer: Renesas Electronics Corporation
Categories: Gate Drivers
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The Renesas Electronics Corporation ISL6612BIRZ-T is a half-bridge gate driver IC, designed for efficient control of N-channel MOSFETs. This component, supplied in a 10-DFN (3x3) package on tape and reel, features two non-inverting drivers. It supports a high-side voltage up to 36V and operates from a 7V to 13.2V supply. The ISL6612BIRZ-T offers a peak output current capability of 1.25A sourcing and 2A sinking, with typical rise and fall times of 26ns and 18ns respectively. Its operating temperature range is -40°C to 125°C (TJ). This device finds application in power supply, industrial, and automotive sectors requiring robust half-bridge switching topologies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 10-VFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Voltage - Supply | 7V ~ 13.2V |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 36 V |
| Supplier Device Package | 10-DFN (3x3) |
| Rise / Fall Time (Typ) | 26ns, 18ns |
| Channel Type | Synchronous |
| Driven Configuration | Half-Bridge |
| Number of Drivers | 2 |
| Gate Type | N-Channel MOSFET |
| Logic Voltage - VIL, VIH | - |
| Current - Peak Output (Source, Sink) | 1.25A, 2A |
| Programmable | Not Verified |
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