ISL6612AIBZ
IC GATE DRVR HALF-BRIDGE 8SOICManufacturer: Renesas Electronics Corporation
Categories: Gate Drivers
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The Renesas Electronics Corporation ISL6612AIBZ is a dual, high-performance half-bridge gate driver designed for driving N-channel MOSFETs. This component features a non-inverting input configuration and delivers peak output currents of 1.25A sourcing and 2A sinking, with typical rise and fall times of 26ns and 18ns respectively. Operating within a supply voltage range of 10.8V to 13.2V, it supports a maximum high-side bootstrap voltage of 36V. The ISL6612AIBZ is housed in an 8-SOIC package, suitable for surface mounting, and operates across an industrial temperature range of -40°C to 125°C. This device is commonly utilized in power conversion applications such as DC-DC converters, power supplies, and motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Voltage - Supply | 10.8V ~ 13.2V |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 36 V |
| Supplier Device Package | 8-SOIC |
| Rise / Fall Time (Typ) | 26ns, 18ns |
| Channel Type | Synchronous |
| Driven Configuration | Half-Bridge |
| Number of Drivers | 2 |
| Gate Type | N-Channel MOSFET |
| Logic Voltage - VIL, VIH | - |
| Current - Peak Output (Source, Sink) | 1.25A, 2A |
| Programmable | Not Verified |
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