ISL6612AEIBZ
IC GATE DRVR HALF-BRIDGE 8SOICManufacturer: Renesas Electronics Corporation
Categories: Gate Drivers
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Renesas Electronics Corporation's ISL6612AEIBZ is a dual, non-inverting, half-bridge gate driver designed for efficient control of N-channel MOSFETs. This component delivers 1.25A source and 2A sink peak output current, facilitating rapid switching with typical rise and fall times of 26ns and 18ns respectively. The device supports a high-side bootstrap voltage up to 36V and operates from a supply voltage range of 10.8V to 13.2V. Its architecture is optimized for half-bridge configurations, commonly found in power supply, motor control, and industrial automation applications. Packaged in an 8-SOIC-EP with an exposed pad for enhanced thermal performance, the ISL6612AEIBZ operates across an industrial temperature range of -40°C to 125°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Voltage - Supply | 10.8V ~ 13.2V |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 36 V |
| Supplier Device Package | 8-SOIC-EP |
| Rise / Fall Time (Typ) | 26ns, 18ns |
| Channel Type | Synchronous |
| Driven Configuration | Half-Bridge |
| Number of Drivers | 2 |
| Gate Type | N-Channel MOSFET |
| Logic Voltage - VIL, VIH | - |
| Current - Peak Output (Source, Sink) | 1.25A, 2A |
| Programmable | Not Verified |
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