ISL6612AEIB
IC GATE DRVR HALF-BRIDGE 8SOICManufacturer: Renesas Electronics Corporation
Categories: Gate Drivers
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Renesas Electronics Corporation ISL6612AEIB is a non-inverting half-bridge gate driver IC designed for efficient control of N-channel MOSFETs. This component features two independent drivers, each capable of sourcing 1.25A and sinking 2A peak output current, facilitating synchronous operation. The ISL6612AEIB supports a high-side bootstrap voltage up to 36V and operates from a supply voltage range of 10.8V to 13.2V. Typical rise and fall times are 26ns and 18ns respectively, ensuring fast switching performance. The IC is housed in an 8-SOIC-EP package with an exposed pad for enhanced thermal management, suitable for surface mounting. This device finds application in power supply units, motor control, and power factor correction circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Voltage - Supply | 10.8V ~ 13.2V |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 36 V |
| Supplier Device Package | 8-SOIC-EP |
| Rise / Fall Time (Typ) | 26ns, 18ns |
| Channel Type | Synchronous |
| Driven Configuration | Half-Bridge |
| Number of Drivers | 2 |
| Gate Type | N-Channel MOSFET |
| Logic Voltage - VIL, VIH | - |
| Current - Peak Output (Source, Sink) | 1.25A, 2A |
| Programmable | Not Verified |
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