ISL6612AECBZ-T
IC GATE DRVR HALF-BRIDGE 8SOICManufacturer: Renesas Electronics Corporation
Categories: Gate Drivers
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Renesas Electronics Corporation ISL6612AECBZ-T is a dual-channel, non-inverting half-bridge gate driver. This device is engineered for driving N-Channel MOSFETs in synchronous rectification applications. It provides a peak output current of 1.25A sourcing and 2A sinking, with typical rise and fall times of 26ns and 18ns respectively. The driver supports a high-side bootstrap voltage up to 36V, with a supply voltage range of 10.8V to 13.2V. The ISL6612AECBZ-T is housed in an 8-SOIC-EP package for surface mounting and operates within an ambient temperature range of 0°C to 125°C. This component is commonly utilized in power supply, voltage regulator, and power conversion circuits across various industrial and computing applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 0°C ~ 125°C (TJ) |
| Voltage - Supply | 10.8V ~ 13.2V |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 36 V |
| Supplier Device Package | 8-SOIC-EP |
| Rise / Fall Time (Typ) | 26ns, 18ns |
| Channel Type | Synchronous |
| Driven Configuration | Half-Bridge |
| Number of Drivers | 2 |
| Gate Type | N-Channel MOSFET |
| Logic Voltage - VIL, VIH | - |
| Current - Peak Output (Source, Sink) | 1.25A, 2A |
| Programmable | Not Verified |
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