ISL6612AECBZ
IC GATE DRVR HALF-BRIDGE 8SOICManufacturer: Renesas Electronics Corporation
Categories: Gate Drivers
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Renesas Electronics Corporation's ISL6612AECBZ Half-Bridge Gate Driver delivers efficient control for N-channel MOSFETs. This non-inverting, dual-driver IC provides peak output currents of 1.25A source and 2A sink, facilitating rapid switching with typical rise and fall times of 26ns and 18ns respectively. Designed for half-bridge configurations, it supports a bootstrap voltage up to 36V, enabling operation with higher-side MOSFETs. The ISL6612AECBZ operates within a supply voltage range of 10.8V to 13.2V and is specified for an operating junction temperature range of 0°C to 125°C. Its 8-SOIC-EP (Exposed Pad) package is suitable for surface mounting. This component finds application in power conversion systems, including DC-DC converters and motor control, often within the industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 0°C ~ 125°C (TJ) |
| Voltage - Supply | 10.8V ~ 13.2V |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 36 V |
| Supplier Device Package | 8-SOIC-EP |
| Rise / Fall Time (Typ) | 26ns, 18ns |
| Channel Type | Synchronous |
| Driven Configuration | Half-Bridge |
| Number of Drivers | 2 |
| Gate Type | N-Channel MOSFET |
| Logic Voltage - VIL, VIH | - |
| Current - Peak Output (Source, Sink) | 1.25A, 2A |
| Programmable | Not Verified |
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