ISL6609CBZ-T
IC GATE DRVR HALF-BRIDGE 8SOICManufacturer: Renesas Electronics Corporation
Categories: Gate Drivers
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The Renesas Electronics Corporation ISL6609CBZ-T is a half-bridge gate driver designed for efficient control of power MOSFETs. This device features two non-inverting gate driver channels, each capable of sourcing and sinking 4A peak output current, with typical rise and fall times of 8ns. Operating with a supply voltage range of 4.5V to 5.5V, it supports a high-side bootstrap voltage of up to 36V. The ISL6609CBZ-T utilizes N-Channel MOSFET gate drive technology and specifies logic thresholds of 1V (VIL) and 2V (VIH). Packaged in an 8-SOIC (0.154", 3.90mm width) surface mount configuration and supplied on tape and reel, this component is suitable for applications in the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 0°C ~ 125°C (TJ) |
| Voltage - Supply | 4.5V ~ 5.5V |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 36 V |
| Supplier Device Package | 8-SOIC |
| Rise / Fall Time (Typ) | 8ns, 8ns |
| Channel Type | Synchronous |
| Driven Configuration | Half-Bridge |
| Number of Drivers | 2 |
| Gate Type | N-Channel MOSFET |
| Logic Voltage - VIL, VIH | 1V, 2V |
| Current - Peak Output (Source, Sink) | -, 4A |
| Programmable | Not Verified |
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