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ISL6609AIBZ-T

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ISL6609AIBZ-T

IC GATE DRVR HALF-BRIDGE 8SOIC

Manufacturer: Renesas Electronics Corporation

Categories: Gate Drivers

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Renesas Electronics Corporation ISL6609AIBZ-T is a high-performance, half-bridge gate driver IC designed for efficient power conversion applications. This non-inverting driver features two channels, each capable of driving N-channel MOSFETs with a peak sink current of 4A. The device operates over a supply voltage range of 4.5V to 5.5V, with a maximum high-side voltage of 36V facilitated by its bootstrap capability. Optimized for speed, it exhibits typical rise and fall times of 8ns, ensuring rapid switching transitions. The ISL6609AIBZ-T is housed in an 8-SOIC package, suitable for surface mounting. Its robust design and performance characteristics make it well-suited for use in industrial power supplies, automotive electronics, and high-efficiency DC-DC converters. The operating temperature range is -40°C to 125°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 125°C (TJ)
Voltage - Supply4.5V ~ 5.5V
Input TypeNon-Inverting
High Side Voltage - Max (Bootstrap)36 V
Supplier Device Package8-SOIC
Rise / Fall Time (Typ)8ns, 8ns
Channel TypeSynchronous
Driven ConfigurationHalf-Bridge
Number of Drivers2
Gate TypeN-Channel MOSFET
Logic Voltage - VIL, VIH1V, 2V
Current - Peak Output (Source, Sink)-, 4A
ProgrammableNot Verified

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