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ISL6608IBZ-T

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ISL6608IBZ-T

IC GATE DRVR HALF-BRIDGE 8SOIC

Manufacturer: Renesas Electronics Corporation

Categories: Gate Drivers

Quality Control: Learn More

Renesas Electronics Corporation's ISL6608IBZ-T is a high-performance half-bridge gate driver designed for demanding power conversion applications. This non-inverting driver features two independent channels, each capable of sourcing and sinking 2A peak output current to drive N-channel MOSFETs. The device supports a bootstrap voltage up to 22V, enabling efficient operation of the high-side MOSFET. With typical rise and fall times of 8ns, the ISL6608IBZ-T facilitates fast switching, crucial for optimizing power efficiency in applications such as switch-mode power supplies, motor control, and DC-DC converters. The component is housed in a compact 8-SOIC surface-mount package and operates within an ambient temperature range of -40°C to 125°C. The ISL6608IBZ-T is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 125°C (TJ)
Voltage - Supply4.5V ~ 5.5V
Input TypeNon-Inverting
High Side Voltage - Max (Bootstrap)22 V
Supplier Device Package8-SOIC
Rise / Fall Time (Typ)8ns, 8ns
Channel TypeSynchronous
Driven ConfigurationHalf-Bridge
Number of Drivers2
Gate TypeN-Channel MOSFET
Logic Voltage - VIL, VIH-
Current - Peak Output (Source, Sink)2A, 2A
ProgrammableNot Verified

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