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ISL6605IRZ-T

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ISL6605IRZ-T

IC GATE DRVR HALF-BRIDGE 8QFN

Manufacturer: Renesas Electronics Corporation

Categories: Gate Drivers

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The Renesas Electronics Corporation ISL6605IRZ-T is a dual-channel, half-bridge gate driver designed for N-channel MOSFETs. This component features non-inverting inputs and provides 2A peak source and sink current, enabling fast switching with typical rise and fall times of 8ns. It operates from a supply voltage of 4.5V to 5.5V, with a maximum bootstrap voltage of 33V for the high-side driver. The ISL6605IRZ-T is housed in an 8-QFN (3x3) exposed pad package, suitable for surface mounting. Its robust design makes it suitable for applications in computing, industrial power supplies, and power over Ethernet (PoE) systems. This device is supplied in tape and reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-VQFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 125°C (TJ)
Voltage - Supply4.5V ~ 5.5V
Input TypeNon-Inverting
High Side Voltage - Max (Bootstrap)33 V
Supplier Device Package8-QFN (3x3)
Rise / Fall Time (Typ)8ns, 8ns
Channel TypeSynchronous
Driven ConfigurationHalf-Bridge
Number of Drivers2
Gate TypeN-Channel MOSFET
Logic Voltage - VIL, VIH1V, 2V
Current - Peak Output (Source, Sink)2A, 2A
ProgrammableNot Verified

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