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ISL6207HBZ-T

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ISL6207HBZ-T

IC GATE DRVR HALF-BRIDGE 8SOIC

Manufacturer: Renesas Electronics Corporation

Categories: Gate Drivers

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Renesas Electronics Corporation presents the ISL6207HBZ-T, a half-bridge gate driver IC designed for efficient power control. This non-inverting device features two independent drivers, each capable of sourcing and sinking 2A peak output current, facilitating the control of N-channel MOSFETs in a half-bridge configuration. The high-side drive is supported by a bootstrap voltage up to 36V, while the device operates from a supply voltage of 4.5V to 5.5V. Optimized for rapid switching, it exhibits typical rise and fall times of 8ns. The ISL6207HBZ-T is housed in an 8-SOIC package for surface mounting and is supplied on tape and reel. This component finds application in power supply units, battery charging systems, and motor control circuits.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-10°C ~ 125°C (TJ)
Voltage - Supply4.5V ~ 5.5V
Input TypeNon-Inverting
High Side Voltage - Max (Bootstrap)36 V
Supplier Device Package8-SOIC
Rise / Fall Time (Typ)8ns, 8ns
Channel TypeSynchronous
Driven ConfigurationHalf-Bridge
Number of Drivers2
Gate TypeN-Channel MOSFET
Logic Voltage - VIL, VIH1V, 2V
Current - Peak Output (Source, Sink)2A, 2A
ProgrammableNot Verified

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