ISL2100AABZ
IC GATE DRVR HALF-BRIDGE 8SOICManufacturer: Renesas Electronics Corporation
Categories: Gate Drivers
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Renesas Electronics Corporation's ISL2100AABZ is a high-performance half-bridge gate driver designed for efficient power conversion applications. This component features independent, non-inverting gate drive channels, capable of sourcing and sinking 2A peak output current. The ISL2100AABZ supports N-channel MOSFETs and is engineered for operation with a supply voltage ranging from 9V to 14V. It boasts a high side voltage capability of up to 114V (bootstrap). The device operates efficiently with typical rise and fall times of 10ns, ensuring fast switching characteristics. Housed in an 8-SOIC package, this component is suitable for surface mounting and operates across an industrial temperature range of -40°C to 125°C. The ISL2100AABZ finds application in various power electronics systems, including motor drivers and power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Voltage - Supply | 9V ~ 14V |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 114 V |
| Supplier Device Package | 8-SOIC |
| Rise / Fall Time (Typ) | 10ns, 10ns |
| Channel Type | Independent |
| Driven Configuration | Half-Bridge |
| Number of Drivers | 2 |
| Gate Type | N-Channel MOSFET |
| Logic Voltage - VIL, VIH | 3.7V, 7.4V |
| Current - Peak Output (Source, Sink) | 2A, 2A |
| Programmable | Not Verified |
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