HIP6603BECBZ
IC GATE DRVR HALF-BRIDGE 8SOICManufacturer: Renesas Electronics Corporation
Categories: Gate Drivers
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Renesas Electronics Corporation HIP6603BECBZ is a Half-Bridge Gate Driver IC, designed for efficient control of power MOSFETs in synchronous rectification applications. This non-inverting, single-channel device operates from a supply voltage range of 10.8V to 13.2V, featuring a maximum high-side bootstrap voltage of 15V. The HIP6603BECBZ is housed in an 8-SOIC-EP package, facilitating surface mounting and thermal management through its exposed pad. It is specified for operation within an ambient temperature range of 0°C to 125°C. Typical rise and fall times are 20ns, ensuring rapid switching transitions crucial for power supply, power management, and motor control applications. This component is supplied in tubes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 0°C ~ 125°C (TJ) |
| Voltage - Supply | 10.8V ~ 13.2V |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 15 V |
| Supplier Device Package | 8-SOIC-EP |
| Rise / Fall Time (Typ) | 20ns, 20ns |
| Channel Type | Synchronous |
| Driven Configuration | Half-Bridge |
| Number of Drivers | 2 |
| Gate Type | N-Channel MOSFET |
| Logic Voltage - VIL, VIH | - |
| Current - Peak Output (Source, Sink) | - |
| Programmable | Not Verified |
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