HIP6603BECB
IC GATE DRVR HALF-BRIDGE 8SOICManufacturer: Renesas Electronics Corporation
Categories: Gate Drivers
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Renesas Electronics Corporation's HIP6603BECB is a half-bridge gate driver IC designed for high-efficiency power conversion applications. This non-inverting, dual-channel driver features a synchronous gate drive configuration suitable for N-channel MOSFETs. It operates from a supply voltage range of 10.8V to 13.2V, with a maximum high-side bootstrap voltage of 15V. The device is housed in an 8-SOIC-EP package, facilitating surface mounting. Typical rise and fall times are 20ns, ensuring fast switching performance. The HIP6603BECB is commonly employed in power supply units, voltage regulator modules, and motor control systems across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 0°C ~ 125°C (TJ) |
| Voltage - Supply | 10.8V ~ 13.2V |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 15 V |
| Supplier Device Package | 8-SOIC-EP |
| Rise / Fall Time (Typ) | 20ns, 20ns |
| Channel Type | Synchronous |
| Driven Configuration | Half-Bridge |
| Number of Drivers | 2 |
| Gate Type | N-Channel MOSFET |
| Logic Voltage - VIL, VIH | - |
| Current - Peak Output (Source, Sink) | - |
| Programmable | Not Verified |
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