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HIP6603BCBZ-T

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HIP6603BCBZ-T

IC GATE DRVR HALF-BRIDGE 8SOIC

Manufacturer: Renesas Electronics Corporation

Categories: Gate Drivers

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The Renesas Electronics Corporation HIP6603BCBZ-T is a half-bridge gate driver IC designed for efficient control of power MOSFETs. This non-inverting driver features a synchronous channel configuration and is housed in an 8-SOIC package, suitable for surface mounting. It supports a high-side bootstrap voltage of up to 15V and operates from a supply voltage range of 10.8V to 13.2V. The HIP6603BCBZ-T is optimized for applications requiring rapid switching, exhibiting typical rise and fall times of 20ns. This component is commonly utilized in power supply circuits, motor control applications, and various industrial power management systems. The device is supplied in a tape and reel (TR) package for automated assembly processes.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature0°C ~ 125°C (TJ)
Voltage - Supply10.8V ~ 13.2V
Input TypeNon-Inverting
High Side Voltage - Max (Bootstrap)15 V
Supplier Device Package8-SOIC
Rise / Fall Time (Typ)20ns, 20ns
Channel TypeSynchronous
Driven ConfigurationHalf-Bridge
Number of Drivers2
Gate TypeN-Channel MOSFET
Logic Voltage - VIL, VIH-
Current - Peak Output (Source, Sink)-
ProgrammableNot Verified

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