HIP6601BECBZ
IC GATE DRVR HALF-BRIDGE 8SOICManufacturer: Renesas Electronics Corporation
Categories: Gate Drivers
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Renesas Electronics Corporation HIP6601BECBZ is a half-bridge gate driver IC designed for efficient power conversion. This non-inverting driver features a synchronous channel configuration and supports N-Channel MOSFETs. It operates with a supply voltage range of 10.8V to 13.2V, accommodating a bootstrap voltage of up to 15V for high-side drive. The device is housed in an 8-SOIC-EP (Exposed Pad) package with a 0.154"" (3.90mm) width, suitable for surface mounting. Typical rise and fall times are 20ns, enabling fast switching performance. The HIP6601BECBZ is engineered for applications in automotive, industrial, and power supply sectors where robust half-bridge topologies are critical. It provides two drivers within a single component, facilitating compact design implementations.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 0°C ~ 125°C (TJ) |
| Voltage - Supply | 10.8V ~ 13.2V |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 15 V |
| Supplier Device Package | 8-SOIC-EP |
| Rise / Fall Time (Typ) | 20ns, 20ns |
| Channel Type | Synchronous |
| Driven Configuration | Half-Bridge |
| Number of Drivers | 2 |
| Gate Type | N-Channel MOSFET |
| Logic Voltage - VIL, VIH | - |
| Current - Peak Output (Source, Sink) | - |
| Programmable | Not Verified |
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