HIP2211FBZ-T7A
IC GATE DRVR HALF-BRIDGE 8SOICManufacturer: Renesas Electronics Corporation
Categories: Gate Drivers
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The Renesas Electronics Corporation HIP2211FBZ-T7A is a half-bridge gate driver IC designed for efficient control of power MOSFETs. This non-inverting device features two drivers capable of sourcing 3A and sinking 4A peak output current, enabling robust switching performance. The HIP2211FBZ-T7A supports a supply voltage range of 6V to 18V and a maximum bootstrap voltage of 115V. Its logic voltage thresholds are specified at 1.47V (VIL) and 1.84V (VIH), ensuring compatibility with various control logic levels.
The device is housed in an 8-SOIC (0.154", 3.90mm Width) surface-mount package, supplied on tape and reel (TR). Typical rise and fall times are 435ns and 365ns, respectively. The HIP2211FBZ-T7A is suitable for applications requiring high-side and low-side MOSFET control in a half-bridge configuration, including power supplies and motor control systems. It operates across an industrial temperature range of -40°C to 125°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Voltage - Supply | 6V ~ 18V |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 115 V |
| Supplier Device Package | 8-SOIC |
| Rise / Fall Time (Typ) | 435ns, 365ns |
| Channel Type | Synchronous |
| Driven Configuration | Half-Bridge |
| Number of Drivers | 2 |
| Gate Type | N-Channel MOSFET |
| Logic Voltage - VIL, VIH | 1.47V, 1.84V |
| Current - Peak Output (Source, Sink) | 3A, 4A |
| Programmable | Not Verified |
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