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HIP2101IBZT7A

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HIP2101IBZT7A

IC GATE DRVR HALF-BRIDGE 8SOIC

Manufacturer: Renesas Electronics Corporation

Categories: Gate Drivers

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Renesas Electronics Corporation's HIP2101IBZT7A is a half-bridge gate driver IC featuring non-inverting inputs. This component is designed for driving N-channel MOSFETs in a half-bridge configuration, offering independent control for two drivers. It provides robust performance with a peak output current of 2A source and 2A sink, and a high side voltage capability up to 114V (bootstrap). The logic voltage thresholds are specified with VIL at 0.8V and VIH at 2.2V. Packaged in an 8-SOIC (0.154", 3.90mm Width) for surface mounting, it operates across a wide temperature range of -55°C to 150°C (TJ). Typical rise and fall times are 10ns, ensuring efficient switching. This device is suitable for applications in power supply, motor control, and industrial automation sectors. The HIP2101IBZT7A is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Voltage - Supply9V ~ 14V
Input TypeNon-Inverting
High Side Voltage - Max (Bootstrap)114 V
Supplier Device Package8-SOIC
Rise / Fall Time (Typ)10ns, 10ns
Channel TypeIndependent
Driven ConfigurationHalf-Bridge
Number of Drivers2
Gate TypeN-Channel MOSFET
Logic Voltage - VIL, VIH0.8V, 2.2V
Current - Peak Output (Source, Sink)2A, 2A
ProgrammableNot Verified

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