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HIP2101EIB

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HIP2101EIB

IC GATE DRVR HALF-BRIDGE 8SOIC

Manufacturer: Renesas Electronics Corporation

Categories: Gate Drivers

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The Renesas Electronics Corporation HIP2101EIB is a half-bridge gate driver IC designed for efficient control of N-channel MOSFETs. This component features independent channels, each capable of sourcing and sinking 2A peak output current, facilitating rapid switching. The driver operates with a supply voltage range of 9V to 14V and supports a high-side bootstrap voltage up to 114V. It utilizes non-inverting logic inputs with VIL/VIH thresholds of 0.8V and 2.2V, respectively. The HIP2101EIB boasts typical rise and fall times of 10ns, enabling high-frequency operation. Packaged in an 8-SOIC with an exposed pad (8-SOIC-EP), this surface-mount device is suitable for demanding applications in industrial motor control and power conversion systems. Its robust operating temperature range of -55°C to 150°C ensures reliability in harsh environments.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / Case8-SOIC (0.154"", 3.90mm Width) Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Voltage - Supply9V ~ 14V
Input TypeNon-Inverting
High Side Voltage - Max (Bootstrap)114 V
Supplier Device Package8-SOIC-EP
Rise / Fall Time (Typ)10ns, 10ns
Channel TypeIndependent
Driven ConfigurationHalf-Bridge
Number of Drivers2
Gate TypeN-Channel MOSFET
Logic Voltage - VIL, VIH0.8V, 2.2V
Current - Peak Output (Source, Sink)2A, 2A
ProgrammableNot Verified

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