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HIP2100IBZT7A

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HIP2100IBZT7A

IC GATE DRVR HALF-BRIDGE 8SOIC

Manufacturer: Renesas Electronics Corporation

Categories: Gate Drivers

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Renesas Electronics Corporation HIP2100IBZT7A is a dual, half-bridge gate driver IC designed for driving N-channel MOSFETs. This non-inverting device offers independent control of two high-side and two low-side drivers within a single 8-SOIC package. It features robust output current capabilities of 2A source and 2A sink, enabling efficient switching with typical rise and fall times of 10ns. The HIP2100IBZT7A supports a bootstrap voltage up to 114V, facilitating high-side drive operation with a supply voltage range of 9V to 14V. Its operating temperature range of -55°C to 150°C makes it suitable for demanding applications. This component finds utility in power conversion systems, motor control, and power supply designs across various industrial and automotive sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Voltage - Supply9V ~ 14V
Input TypeNon-Inverting
High Side Voltage - Max (Bootstrap)114 V
Supplier Device Package8-SOIC
Rise / Fall Time (Typ)10ns, 10ns
Channel TypeIndependent
Driven ConfigurationHalf-Bridge
Number of Drivers2
Gate TypeN-Channel MOSFET
Logic Voltage - VIL, VIH4V, 7V
Current - Peak Output (Source, Sink)2A, 2A
ProgrammableNot Verified

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