HIP2100EIBT
IC GATE DRVR HALF-BRIDGE 8SOICManufacturer: Renesas Electronics Corporation
Categories: Gate Drivers
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Renesas Electronics Corporation HIP2100EIBT is a half-bridge gate driver IC designed for efficient control of power MOSFETs and IGBTs. This non-inverting device features independent high-side and low-side drivers, each capable of delivering 2A peak output current for both source and sink. The HIP2100EIBT supports bootstrap operation with a maximum high-side voltage of 114V, enabling it to drive high-side transistors in bootstrap configurations. It operates from a supply voltage range of 9V to 14V and is specified with logic thresholds of 4V (VIL) and 7V (VIH). The device is housed in an 8-SOIC-EP package with an exposed pad for enhanced thermal performance, suitable for surface mounting. Typical rise and fall times are 10ns, facilitating high-frequency switching applications. This component is widely utilized in industrial power supplies, motor control, and electric vehicle power trains.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Voltage - Supply | 9V ~ 14V |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 114 V |
| Supplier Device Package | 8-SOIC-EP |
| Rise / Fall Time (Typ) | 10ns, 10ns |
| Channel Type | Independent |
| Driven Configuration | Half-Bridge |
| Number of Drivers | 2 |
| Gate Type | N-Channel MOSFET |
| Logic Voltage - VIL, VIH | 4V, 7V |
| Current - Peak Output (Source, Sink) | 2A, 2A |
| Programmable | Not Verified |
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