UPA679TB-T1-A
MOSFET N/P-CH 20V SC-70 6SSPManufacturer: Renesas Electronics Corporation
Categories: FET, MOSFET Arrays
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The Renesas Electronics Corporation UPA679TB-T1-A is a p-channel and n-channel MOSFET array designed for surface mount applications. This component features a 20V drain-to-source voltage rating and supports continuous drain currents of 350mA for the n-channel and 250mA for the p-channel, both at 25°C. With a maximum power dissipation of 200mW, it is suitable for low-power switching and amplification tasks. The device utilizes MOSFET technology and offers a logic level gate feature. The on-resistance (Rds On) is specified at a maximum of 570mOhm at 300mA and 4.5V Vgs. The package is a 6-TSSOP, SC-88, SOT-363, supplied in cut tape. This MOSFET array is commonly employed in consumer electronics and industrial automation due to its compact form factor and performance characteristics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 200mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 350mA, 250mA |
| Input Capacitance (Ciss) (Max) @ Vds | 28pF @ 10V |
| Rds On (Max) @ Id, Vgs | 570mOhm @ 300mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | SC-88 |
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