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UPA672CT-T1-AT

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UPA672CT-T1-AT

MOSFET 2N-CH 60V 0.1A SC88

Manufacturer: Renesas Electronics Corporation

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Renesas Electronics Corporation presents the UPA672CT-T1-AT, a dual N-channel MOSFET array. This component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 100mA at 25°C (Ta). Designed for surface mounting in the SC-88 package, it offers a maximum power dissipation of 200mW (Ta). Key electrical characteristics include a gate charge (Qg) of 2nC (Max) at 10V and input capacitance (Ciss) of 20pF (Max) at 10V. The MOSFETs operate with a logic level gate, supporting a 4.5V drive, and exhibit a threshold voltage (Vgs(th)) of 2.5V (Max) at 250µA. On-resistance (Rds On) is specified at 2.7 Ohms (Max) at 100mA and 10V. This device is suitable for applications in consumer electronics and industrial control systems. The UPA672CT-T1-AT is supplied in a Tape & Reel (TR) package.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual), Schottky
Operating Temperature150°C
TechnologyMOSFET (Metal Oxide)
Power - Max200mW (Ta)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds20pF @ 10V
Rds On (Max) @ Id, Vgs2.7Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs2nC @ 10V
FET FeatureLogic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageSC-88

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