UPA2792AGR-E1-AT
MOSFET N/P-CH 30V 10A 8SOPManufacturer: Renesas Electronics Corporation
Categories: FET, MOSFET Arrays
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Renesas Electronics Corporation UPA2792AGR-E1-AT is a MOSFET array featuring N and P-channel configurations with a 30V drain-source voltage rating. This component offers a continuous drain current of 10A at 25°C and a low on-resistance of 12.5mOhm (max) at 5A, 10V. The device is designed with a logic level gate for enhanced compatibility. Key electrical characteristics include a gate charge (Qg) of 42nC (max) at 10V and input capacitance (Ciss) of 2200pF (max) at 10V. Packaged in an 8-PowerSOIC (0.173", 4.40mm Width) for surface mounting, the UPA2792AGR-E1-AT supports a maximum power dissipation of 2W and operates within a temperature range of -55°C to 150°C (TJ). This component is utilized in applications such as power management and motor control within the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerSOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 10A |
| Input Capacitance (Ciss) (Max) @ Vds | 2200pF @ 10V |
| Rds On (Max) @ Id, Vgs | 12.5mOhm @ 5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 42nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-SOP |
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