UPA2791GR-E1-AT
MOSFET N/P-CH 30V 5A 8SOPManufacturer: Renesas Electronics Corporation
Categories: FET, MOSFET Arrays
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This Renesas Electronics Corporation UPA2791GR-E1-AT is a MOSFET array featuring complementary N-channel and P-channel devices. It offers a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 5A at 25°C. The device boasts a low on-resistance (Rds On) of 36mOhm maximum at 3A, 10V, and a logic-level gate for enhanced drive flexibility. With a maximum power dissipation of 2W and an operating junction temperature of 150°C, it is suitable for demanding applications. The 8-PSOP package, an 8-SOIC variant, facilitates surface mounting. This component is commonly utilized in power management solutions across various industries. Key parameters include a gate charge (Qg) of 10nC maximum at 10V and input capacitance (Ciss) of 400pF maximum at 10V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5A |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 10V |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-PSOP |
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