UPA2756GR-E1-AT
MOSFET 2N-CH 60V 4A 8SOPManufacturer: Renesas Electronics Corporation
Categories: FET, MOSFET Arrays
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Renesas Electronics Corporation UPA2756GR-E1-AT is a dual N-channel MOSFET array designed for power management applications. This 8-PSOP package device features a 60V drain-source voltage and a continuous drain current capability of 4A at 25°C. The MOSFETs offer a low on-resistance of 105mOhm maximum at 2A, 2A, 10V, and a logic level gate for enhanced compatibility with lower voltage control signals. With a gate charge of 6nC maximum at 10V and input capacitance of 260pF maximum at 10V, these devices are suitable for switching applications. The UPA2756GR-E1-AT supports a maximum power dissipation of 2W and operates across a temperature range of -55°C to 150°C. Its surface mount configuration on an 8-SOIC package makes it ideal for compact designs in automotive and industrial equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 4A |
| Input Capacitance (Ciss) (Max) @ Vds | 260pF @ 10V |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-PSOP |
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