UPA2751GR-E1-AT
MOSFET 2N-CH 30V 9A/8A 8SOPManufacturer: Renesas Electronics Corporation
Categories: FET, MOSFET Arrays
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Renesas Electronics Corporation UPA2751GR-E1-AT is a dual N-channel MOSFET array designed for efficient power switching. This component features a 30V drain-source voltage rating and continuous drain currents of 9A and 8A. The UPA2751GR-E1-AT utilizes MOSFET technology with a logic-level gate, offering a gate charge (Qg) of 21nC maximum at 10V. Input capacitance (Ciss) is rated at 1040pF maximum at 10V. The on-resistance (Rds On) is 15.5mOhm maximum at 4.5A drain current and 10V gate-source voltage. Packaged in an 8-PSOP (8-SOIC) surface mount configuration, this device is suitable for applications requiring compact power management. The UPA2751GR-E1-AT is commonly employed in automotive power control and general-purpose switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 9A, 8A |
| Input Capacitance (Ciss) (Max) @ Vds | 1040pF @ 10V |
| Rds On (Max) @ Id, Vgs | 15.5mOhm @ 4.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-PSOP |
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