UPA2670T1R-E2-AX
MOSFET 2P-CH 20V 3A 6HUSONManufacturer: Renesas Electronics Corporation
Categories: FET, MOSFET Arrays
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Renesas Electronics Corporation UPA2670T1R-E2-AX is a dual P-channel MOSFET array designed for demanding applications. This component features a 20V drain-source voltage rating and a continuous drain current capability of 3A per channel at 25°C, with a maximum power dissipation of 2.3W. The device utilizes Metal Oxide technology and offers a low on-resistance of 79mOhm at 1.5A, 4.5V Vgs. Its logic-level gate functionality supports 1.8V drive, simplifying integration with low-voltage control signals. Key parameters include a maximum gate charge of 5.1nC at 4.5V and an input capacitance of 473pF at 10V. The UPA2670T1R-E2-AX is supplied in a compact 6-HUSON (2x2) surface-mount package, delivered on tape and reel. This MOSFET array is commonly employed in power management solutions within the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-WFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.3W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3A |
| Input Capacitance (Ciss) (Max) @ Vds | 473pF @ 10V |
| Rds On (Max) @ Id, Vgs | 79mOhm @ 1.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 5.1nC @ 4.5V |
| FET Feature | Logic Level Gate, 1.8V Drive |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 6-HUSON (2x2) |
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