UPA2650T1E-E2-AT
MOSFET 2N-CH 20V 3.8A 6MLPManufacturer: Renesas Electronics Corporation
Categories: FET, MOSFET Arrays
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Renesas Electronics Corporation UPA2650T1E-E2-AT is a dual N-channel MOSFET array designed for high-efficiency power switching applications. This component features a 20V drain-source voltage (Vdss) rating and a continuous drain current (Id) of 3.8A at 25°C. The low on-resistance of 65mOhm at 3A and 10V (Rds On) makes it suitable for power management in portable electronics, automotive systems, and industrial control. Its logic-level gate drive simplifies integration with low-voltage control signals. The device is housed in a compact 6-MLP (3x3) surface-mount package, offering a maximum power dissipation of 1.1W. Key parameters include a gate charge (Qg) of 2.9nC at 4.5V and an input capacitance (Ciss) of 220pF at 10V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.8A |
| Input Capacitance (Ciss) (Max) @ Vds | 220pF @ 10V |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 2.9nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 6-MLP (3x3) |
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