UPA2590T1H-T1-AT
MOSFET N/P-CH 30V 4.5A 8VSOFManufacturer: Renesas Electronics Corporation
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Renesas Electronics Corporation UPA2590T1H-T1-AT is a MOSFET array featuring both N-channel and P-channel configurations. This device offers a 30V drain-to-source voltage and a continuous drain current of 4.5A at 25°C. The MOSFET array utilizes Metal Oxide technology and includes logic-level gate functionality. Key electrical parameters include a maximum power dissipation of 1.24W, a typical input capacitance (Ciss) of 310pF at 10V, and a gate charge (Qg) of 6.6nC at 10V. The ON-resistance (Rds On) is a maximum of 50mOhm at 2A and 10V. The component is housed in an 8-VSOF package, suitable for surface mounting, and operates within a temperature range of -55°C to 150°C. This component is frequently employed in automotive and industrial applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SMD, Flat Lead |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.24W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 310pF @ 10V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 6.6nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-VSOF |
Request a Quote
Clients Also Buy
NP30N06QDK-E1-AY
MOSFET 2N-CH 60V 30A 8HSON
UPA2350T1G-E4-A
MOSFET 2N-CH 20V 6A 4FLIPCHIP
UPA603T-T2-A
MOSFET 2P-CH 50V 0.1A SC59
