UPA2562T1H-T1-AT
MOSFET 2N-CH 30V 4.5A 8VSOFManufacturer: Renesas Electronics Corporation
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Renesas Electronics Corporation UPA2562T1H-T1-AT is a dual N-channel MOSFET array designed for high-efficiency power switching applications. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 4.5A at 25°C. The optimized Rds(on) of 55mOhm at 2A and 4.5V, combined with a low gate charge (Qg) of 5.4nC (max) at 4.5V, ensures minimal conduction and switching losses. Its logic level gate capability enhances compatibility with low-voltage control signals. The UPA2562T1H-T1-AT is housed in a compact 8-VSOF surface-mount package, enabling high-density designs. This MOSFET array finds utility in automotive systems, power management units, and consumer electronics requiring robust and efficient switching. The maximum power dissipation is rated at 2.2W.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SMD, Flat Lead |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 475pF @ 10V |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 5.4nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Supplier Device Package | 8-VSOF |
Request a Quote
Clients Also Buy
NP30N06QDK-E1-AY
MOSFET 2N-CH 60V 30A 8HSON
UPA2350T1G-E4-A
MOSFET 2N-CH 20V 6A 4FLIPCHIP
UPA603T-T2-A
MOSFET 2P-CH 50V 0.1A SC59
