UPA2561T1H-T1-AT
MOSFET 2N-CH 20V 4.5A 8VSOFManufacturer: Renesas Electronics Corporation
Categories: FET, MOSFET Arrays
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The Renesas Electronics Corporation UPA2561T1H-T1-AT is a 20V, dual N-channel MOSFET array designed for surface mounting in an 8-VSOF package. This component delivers a continuous drain current of 4.5A at 25°C with a low on-resistance of 50mOhm when driven at 2A and 4.5V. Featuring a logic-level gate, it requires a gate-source threshold voltage of 1.5V at 1mA. The device exhibits a maximum power dissipation of 2.2W and has a gate charge (Qg) of 5.4nC at 4.5V. Input capacitance (Ciss) is specified at a maximum of 455pF at 10V. This MOSFET array is commonly employed in power management applications across automotive and industrial sectors.
Additional Information
Series: -RoHS Status: Vendor undefinedManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SMD, Flat Lead |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 455pF @ 10V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 5.4nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Supplier Device Package | 8-VSOF |
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