UPA2550T1H-T2-AT
MOSFET 2P-CH 12V 5A 8VSOFManufacturer: Renesas Electronics Corporation
Categories: FET, MOSFET Arrays
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Renesas Electronics Corporation UPA2550T1H-T2-AT is a 2 P-Channel MOSFET array designed for surface mounting in an 8-VSOF package. This component features a 12V drain-to-source voltage (Vdss) and supports a continuous drain current (Id) of 5A at 25°C, with a maximum power dissipation of 2.2W. The device is engineered with a logic level gate, indicated by a Vgs(th) of 1V (max) @ 1mA. Key electrical parameters include a typical Rds On of 40mOhm @ 2.5A, 4.5V, and a gate charge (Qg) of 8.7nC (max) @ 4V. Input capacitance (Ciss) is rated at 930pF (max) @ 10V. The operating temperature range extends to 150°C (TJ). This MOSFET array is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SMD, Flat Lead |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.2W |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 5A |
| Input Capacitance (Ciss) (Max) @ Vds | 930pF @ 10V |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 2.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 8.7nC @ 4V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | 8-VSOF |
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