UPA2451CTL-E1-A
MOSFET 2N-CH 30V 8.2A 6HWSONManufacturer: Renesas Electronics Corporation
Categories: FET, MOSFET Arrays
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Renesas Electronics Corporation's UPA2451CTL-E1-A is a dual N-channel MOSFET array designed for high-efficiency power switching applications. This component features a drain-to-source voltage (Vdss) of 30V and can handle a continuous drain current (Id) of 8.2A at 25°C. The low on-resistance (Rds On) of 20mOhm at 4A and 4.5V Vgs, coupled with logic level gate operation, ensures minimal conduction losses. With a maximum power dissipation of 700mW and a gate charge (Qg) of 6.3nC at 4V, it is suitable for demanding portable and battery-powered devices. The UPA2451CTL-E1-A is housed in a compact 6-HWSON package, facilitating dense board layouts. This MOSFET array finds application in power management circuits, battery charging, and load switching within the consumer electronics and industrial automation sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-VFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 700mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 605pF @ 10V |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 6.3nC @ 4V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Supplier Device Package | 6-HWSON |
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