UPA2451BTL-E1-A
MOSFET 2N-CH 30V 8.2A 6HWSONManufacturer: Renesas Electronics Corporation
Categories: FET, MOSFET Arrays
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Renesas Electronics Corporation UPA2451BTL-E1-A is a 30V, dual N-channel MOSFET array designed for surface mount applications. This component features a low on-resistance of 20mOhm at 4A and 4.5V, with a continuous drain current capability of 8.2A per channel at 25°C. The UPA2451BTL-E1-A is constructed with Metal Oxide technology and offers a logic level gate feature, requiring a gate-source threshold voltage of 1.5V maximum at 1mA. Key electrical parameters include a gate charge of 9.2nC maximum at 4V and input capacitance of 540pF maximum at 10V. The device is provided in a 6-HWSON package and is suitable for use in power management and automotive applications. The maximum power dissipation is rated at 700mW.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-VFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 700mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 10V |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 9.2nC @ 4V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Supplier Device Package | 6-HWSON |
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