UPA2450BTL-E1-A
MOSFET 2N-CH 20V 8.6A 6HWSONManufacturer: Renesas Electronics Corporation
Categories: FET, MOSFET Arrays
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The Renesas Electronics Corporation UPA2450BTL-E1-A is a dual N-channel MOSFET array designed for efficient power switching applications. This component features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 8.6A at 25°C. With a low on-resistance (Rds On) of 17.5mOhm at 4A and 4.5V Vgs, it minimizes conduction losses. The device is constructed using advanced MOSFET technology and offers a logic-level gate for compatibility with lower voltage control signals. Key electrical characteristics include a gate charge (Qg) of 8nC maximum at 4V Vgs and input capacitance (Ciss) of 520pF maximum at 10V Vds. The UPA2450BTL-E1-A is housed in a compact 6-HWSON (6-VFDFN Exposed Pad) surface mount package with a maximum power dissipation of 700mW. This component is commonly utilized in automotive, industrial, and consumer electronics power management circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-VFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 700mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 8.6A |
| Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 10V |
| Rds On (Max) @ Id, Vgs | 17.5mOhm @ 4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 8nC @ 4V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Supplier Device Package | 6-HWSON |
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