Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

FET, MOSFET Arrays

UPA2379T1P-E1-A

Banner
productimage

UPA2379T1P-E1-A

MOSFET 2N-CH LGA

Manufacturer: Renesas Electronics Corporation

Categories: FET, MOSFET Arrays

Quality Control: Learn More

The Renesas Electronics Corporation UPA2379T1P-E1-A is a dual N-channel MOSFET array housed in a 6-EFLIP-LGA package. This surface mount component features logic-level gate technology, enabling operation with a 2.5V drive. The device offers a maximum power dissipation of 1.8W and an operating junction temperature up to 150°C. Its configuration includes two N-channel transistors with a common drain connection. This component is commonly utilized in industrial automation, consumer electronics, and power management applications. The UPA2379T1P-E1-A is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-XFLGA
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual) Common Drain
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max1.8W
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Input Capacitance (Ciss) (Max) @ Vds-
Rds On (Max) @ Id, Vgs-
Gate Charge (Qg) (Max) @ Vgs20nC @ 4V
FET FeatureLogic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id-
Supplier Device Package6-EFLIP-LGA (2.17x1.47)

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
NP30N06QDK-E1-AY

MOSFET 2N-CH 60V 30A 8HSON

product image
UPA1950TE-T1-AT

MOSFET 2P-CH 12V 2.5A SC95

product image
FS30ASJ-06F#B00

MOSFET N-CH