UPA2350T1P-E4-A
MOSFET 2N-CH 20V 6A LGAManufacturer: Renesas Electronics Corporation
Categories: FET, MOSFET Arrays
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The Renesas Electronics Corporation UPA2350T1P-E4-A is a 20V, 6A dual N-channel MOSFET array in a 4-EFLIP-LGA package. This device features a logic level gate, enabling operation with a 2.5V drive voltage. With a continuous drain current capability of 6A at 25°C (Ta) and a low on-resistance of 35mOhm maximum at 3A, 4.5V, it offers efficient power switching. The array's 1.3W maximum power dissipation (Ta) and 150°C operating temperature make it suitable for demanding applications. Key parameters include a gate charge of 8.6nC maximum and input capacitance of 542pF maximum. This component is commonly found in automotive and industrial applications requiring compact, high-performance power management solutions. It is supplied on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-XFBGA |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.3W (Ta) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 542pF @ 10V |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 8.6nC @ 4V |
| FET Feature | Logic Level Gate, 2.5V Drive |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Supplier Device Package | 4-EFLIP-LGA (1.62x1.62) |
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