UPA2350T1G-E4-A
MOSFET 2N-CH 20V 6A 4FLIPCHIPManufacturer: Renesas Electronics Corporation
Categories: FET, MOSFET Arrays
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Renesas Electronics Corporation UPA2350T1G-E4-A is a dual N-channel MOSFET array designed for high-efficiency power management applications. This device features a 20V drain-source voltage rating and a continuous drain current capability of 6A at 25°C. Optimized for space-constrained designs, it is housed in a compact 4-FlipChip package, suitable for surface mount assembly. The MOSFET array exhibits a low on-resistance of 35mOhm maximum at 3A and 4.5V, contributing to reduced conduction losses. Its logic-level gate threshold (Vgs(th) max of 1.5V @ 1mA) facilitates direct control from low-voltage microcontrollers. Key parameters include a gate charge (Qg) of 8.6nC maximum at 4V and input capacitance (Ciss) of 542pF maximum at 10V. This component is commonly utilized in consumer electronics, mobile devices, and automotive systems requiring efficient switching and power control.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-XBGA, 4-FCBGA |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.3W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Input Capacitance (Ciss) (Max) @ Vds | 542pF @ 10V |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 8.6nC @ 4V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Supplier Device Package | 4-FlipChip |
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