UPA1970TE-T1-AT
MOSFET 2N-CH 20V 2.2A SC95-6Manufacturer: Renesas Electronics Corporation
Categories: FET, MOSFET Arrays
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Renesas Electronics Corporation UPA1970TE-T1-AT is a dual N-channel MOSFET array featuring a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 2.2A at 25°C. This component is housed in a compact SC-95-6, Mini Mold Thin surface mount package, supplied on tape and reel. Key electrical characteristics include a maximum power dissipation of 1.15W, a typical gate charge (Qg) of 2.3nC at 4V, and input capacitance (Ciss) of 160pF at 10V. The device offers a low on-resistance (Rds On) of 69mOhm at 1A and 4.5V, indicative of its efficiency. Designed with logic level gate operation, it is suitable for applications requiring efficient power switching in automotive and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-95-6 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.15W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 160pF @ 10V |
| Rds On (Max) @ Id, Vgs | 69mOhm @ 1A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 2.3nC @ 4V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Supplier Device Package | SC-95-6, Mini Mold Thin |
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