UPA1952TE-T1-A
MOSFET 2P-CH 20V 2A SC95Manufacturer: Renesas Electronics Corporation
Categories: FET, MOSFET Arrays
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Renesas Electronics Corporation UPA1952TE-T1-A is a dual P-channel MOSFET array designed for surface mounting in the SC-95 package. This device offers a continuous drain current of 2A and a drain-to-source voltage of 20V. It features logic-level gate drive capability, supporting operation with a 1.8V gate voltage. The UPA1952TE-T1-A exhibits a maximum on-resistance of 135mOhm at 1A and 4.5V Vgs, with a typical gate charge of 2.3nC at 4V. Its input capacitance is specified at a maximum of 272pF at 10V. The component has a maximum power dissipation of 1.15W and an operating temperature range of -55°C to 150°C. This MOSFET array is commonly utilized in consumer electronics and industrial automation applications where space-constrained power switching and control are required. It is supplied on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-95 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.15W (Ta) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 272pF @ 10V |
| Rds On (Max) @ Id, Vgs | 135mOhm @ 1A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 2.3nC @ 4V |
| FET Feature | Logic Level Gate, 1.8V Drive |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Supplier Device Package | SC-95 |
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