UPA1950TE-T1-AT
MOSFET 2P-CH 12V 2.5A SC95Manufacturer: Renesas Electronics Corporation
Categories: FET, MOSFET Arrays
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Renesas Electronics Corporation UPA1950TE-T1-AT is a dual P-channel MOSFET array designed for high-efficiency switching applications. This component offers a Drain-to-Source Voltage (Vdss) of 12V and a continuous drain current (Id) of 2.5A (Ta) at 25°C. Key features include a low gate threshold voltage (Vgs(th)) of 1.5V (Max) at 1mA, enabling logic-level gate operation with a 1.8V drive. The device exhibits a low on-resistance (Rds On) of 130mOhm (Max) at 1.5A and 4.5V, contributing to reduced power loss. With a maximum power dissipation of 1.15W (Ta), it is suitable for demanding thermal environments. The UPA1950TE-T1-AT is supplied in an SC-95 surface-mount package and is available on tape and reel (TR). This MOSFET array finds application in automotive systems, power management, and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-95 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.15W (Ta) |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 220pF @ 10V |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 1.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1.9nC @ 4V |
| FET Feature | Logic Level Gate, 1.8V Drive |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Supplier Device Package | SC-95 |
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